NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
CORPORATION
GM194A
Description Features
The GM194A is designed for medium power amplifier applications. 1 Amp continuous...
Description
CORPORATION
GM194A
Description Features
The GM194A is designed for medium power amplifier applications. 1 Amp continuous current Complementary to GM195A
ISSUED DATE :2006/06/07 REVISED DATE :
NP N SIL ICON P L ANAR M E DI UM PO WE R T RANS ISTO R
Package Dimensions
SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -65~+150 40 40 5 1 2 1 Unit
V V V A A W
Electrical Characteristics (Ta = 25
Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 40 40 5 300 300 200 35 150 Typ. -
, unless otherwise stated) Max. Unit Test Conditions V IC=100uA , IE=0 V IC=10mA, IB=0 V IE=100uA ,IC=0 100 nA VCB=30V, IE=0 100 nA VCES=30V 100 nA VEB=4V, IC=0 0.3 V IC=500mA, IB=50mA 0.5 V IC=1A, IB=100mA 1.1 V IC=1A, IB=100mA 1.0 V VCE=5V, IC=1A VCE=5V, IC=1mA 900 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=5V, IC=2A MHz VCE=10V, IC=50mA, f=100MHz 10 pF VCB=10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Classification Of hFE2
Rank Range P 300 ~ 700
Q 500 ~...
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