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2SA1085

Hitachi Semiconductor

Silicon PNP Epitaxial Transistor

2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair wi...


Hitachi Semiconductor

2SA1085

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Description
2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1083 –60 –60 –5 –100 100 400 150 –55 to +150 2SA1084 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1085 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SA1083, 2SA1084, 2SA1085 Electrical Characteristics (Ta = 25°C) 2SA1083 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO –60 V(BR)CEO –60 V(BR)EBO –5 ICBO IEBO 1 2SA1084 Max — — — –0.1 –0.1 800 –0.2 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA Typ — — — — — — — –120 — –120 — –5 — — 250 — — — — — — — — — — — — 250 — — — — — DC current transfer ratio hFE* Collector to emitter saturation voltage...




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