SIS407DN

New Product SiS407DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES ID (A)e, f - 25 - 25 - 25 38 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.0095 at VGS = - 4.5 V 0.0138 at VGS = - 2.5 V 0.0195 at VGS = - 1.8 V PowerPAK 1212-8 Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100% Rg Tested 100% UIS Tested Compliant to RoHS Directive 2002/95/EC S 3.30 mm S 1 2 3 S S 3.30 mm APPLICATIONS Load Switch Battery Switch G G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiS407DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 20 ±8 - 25e - 25e - 15.4a, b - 12.3a, b - 40 - 25e - 3.0a, b - 20 20 33 21 3.6a, b 2.3a, b - 55 to 150 260 °C mJ W A Unit V Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg?73257). The Powe...