SIS436DN

New Product SiS436DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0105 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a, g 16 6.7 nC 16 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested PowerPAK® 1212-8 APPLICATIONS DC/DC Conversion 3.30 mm D 3.30 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiS436DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 25 ± 20 16a, g 16g 13.6b, c 10.7b, c 32g 15 11.25 16a, g 2.9b, c 27.7 17.7 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ A TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.6 Maximum 36 4.5 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www...