SIS468DN

SiS468DN Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) 0.0195 at VGS = 10 V 0.0210 at VGS = 7.5 V 0.0320 at VGS = 4.5 V ID (A)f 30g 30g 28.5 8.7 nC Qg (Typ.) TrenchFET® Power MOSFET 100 % Rg and UIS Tested Capable of Operating with 5 V Gate Drive Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8 APPLICATIONS Telecom Bricks Primary side switch Synchronous Rectification G D 3.30 mm S 1 2 3 S S 3.30 mm G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiS468DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 80 ± 20 30g 29.2 9.8a, b 7.8a, b 60 30g 3.1a, b 10 5 52 33.3 3.7a, b 2.4a, b - 55 to 150 260 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, e Symbol t  10 s Steady State RthJA RthJC Typical 26 1.9 Maximum 33 2.4...