SIS478DN

New Product SiS478DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.020 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 12 3.6 nC 12 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Notebook PC 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm - System Power - Load Switch D G Bottom View Ordering Information: SiS478DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 25 12a 12a 9.4b, c 7.4b, c 40 12a 2.7b, c 10 5 15.6 10 3.2b, c 2b, c - 55 to 150 260 A Unit V mJ TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 32 6.5 Maximum 39 8 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1...