9NB50FP Datasheet | STP9NB50FP





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Part Number 9NB50FP
Description STP9NB50FP
Manufacture STMicroelectronics
Total Page 9 Pages
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Features: N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220 /TO-220FP PowerMesh™ MOSFET TYPE STP9 NB50 STP9NB50FP s s s s s STP9NB50 STP 9NB50FP VDSS 500 V 500 V RDS(on) < 0. 85 Ω < 0.85 Ω ID 8.6 A 4.9 A TYPI CAL RDS(on) = 0.75 Ω EXTREMELY HIGH d v/dt CAPABILITY 100% AVALANCHE TESTED V ERY LOW INTRINSIC CAPACITANCES GATE CHA RGE MINIMIZED 3 1 2 1 2 3 TO-220 TO -220FP DESCRIPTION Using the latest hi gh voltage MESH OVERLAY™ process, STM icroelectronics has designed an advance d family of power MOSFETs with outstand ing performances. The new patent pendin g strip layout coupled with the Company ’s proprieraty edge termination struc ture, gives the lowest RDS(on) per area , exceptional avalanche and dv/dt capab ilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC- AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOT OR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/d.

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STP9NB50
STP9NB50FP
N-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FP
PowerMeshMOSFET
TYPE
VDSS
RDS(on)
ID
STP9NB50
500 V < 0.85 8.6 A
STP9NB50FP
500 V < 0.85 4.9 A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM (q)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
May 2000
Value
STP9NB50 STP9NB50FP
500
500
±30
8.6
4.9
5.4 3.1
34.4 34.4
125 40
1 0.32
4.5 4.5
- 2000
–65 to 150
150
(1)ISD<9A, di/dt<200A/µ, VDD<V(BR)DSS,TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9
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