N-Channel MOSFET. FDMS86101A Datasheet

FDMS86101A Datasheet PDF, Equivalent


Part Number

FDMS86101A

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86101A Datasheet PDF


FDMS86101A Datasheet
FDMS86101A
N-Channel PowerTrench® MOSFET
100 V, 60 A, 8 mΩ
Features
„ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
„ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
„ 100% UIL tested
„ 100% Rg tested
„ RoHS Compliant
April 2012
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
Top
Pin 1
Bottom
Pin 1
S
S
S
G
S
S
D
D
Power 56
D
D
D
D
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
60
81
13
180
486
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86101A
Device
FDMS86101A
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86101A Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86101A Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100
V
71 mV/°C
800
±100
nA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13 A
VGS = 6 V, ID = 9.5 A
VGS = 10 V, ID = 13 A, TJ = 125 °C
VDS = 10 V, ID = 13 A
2.0
3.1 4.0
V
-9 mV/°C
6.3
8.0
10.3
53
8
13.5
13.1
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
3095 4120
pF
460 615
pF
15 25 pF
0.1 1.6 3.3
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 13 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 13 A
19
5.4
27
4
42
22
13.5
6.2
35
11
44
10
58
31
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 13 A
(Note 2)
(Note 2)
0.74 1.2
0.81 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13 A, di/dt = 100 A/μs
64 102
102 164
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS 486 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 18 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 51 A.
©2012 Fairchild Semiconductor Corporation
FDMS86101A Rev.C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86101A N-Channel PowerTrench® MOSFE T April 2012 FDMS86101A N-Channel Pow erTrench® MOSFET 100 V, 60 A, 8 mΩ Fe atures General Description This N-Chann el MOSFET is produced using Fairchild S emiconductor‘s advanced Power Trench process thant has been especially tai lored to minimize the on-state resistan ce and yet maintain superior switching performance. „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A „ A dvanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ 100% Rg tested „ RoHS Compl iant Application „ DC-DC Conversion Top Bottom S S Pin 1 S S S S D D D D Pin 1 G D D D G D Power 56 MO SFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source V oltage Gate to Source Voltage Drain Cur rent -Continuous (Package limited) -Con tinuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Powe.
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