N-Channel MOSFET
FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86104
N-Channel Shielded Gate PowerTrench® MOSF...
Description
FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86104
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 16 A, 24 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom
Pin 1 S
S
D
S
S G
S
D
Power 56
D D D D
S
D
G
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 100 ±20 16 7 30 96 73 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.7
(Note 1a)
50
°C/W
Device Marking FDMS86104
Device FDMS86104
Package Po...
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