FDMS8622

FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.5 A, 56 m Features  Shielded Gate MOSFET Technology  Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A  Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A  High performance trench technology for extremely low rDS(on)  High power and current handling capability in a widely used surface mount package  100% UIL Tested  Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications  POE Protection Switch  DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 100 ±20 16.5 4.8 30 12 31 2.5 -55 to +150 Units V V A mJ W °C RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) ...