N-Channel MOSFET
FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86252
N-Channel Shielded Gate PowerTrench® MOS...
Description
FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86252
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 16 A, 51 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Advanced package and silicon combination for low rDS(on) and
high efficiency
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
Power 56
D D D D
S
D
G
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 150 ±20 16 4.6 20 50 69 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
50
°C/W
Device Marking FDMS86252
Device FDMS86252
Pa...
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