FDMS86300

FDMS86300 N-Channel PowerTrench® MOSFET FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 122 A, 3.9 mΩ Features „ Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant December 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ OringFET / Load Switching „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 1a) (Note 4) (Note 3) (Note 1a) 2S 1S Ratings 80 ±20 122 78 19 556 252 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction...