N-Channel MOSFET. FDMS86300DC Datasheet

FDMS86300DC Datasheet PDF, Equivalent


Part Number

FDMS86300DC

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS86300DC Datasheet PDF


FDMS86300DC Datasheet
March 2012
FDMS86300DC
N-Channel Dual CoolTM Power Trench® MOSFET
80 V, 60 A, 3.1 mΩ
Features
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A
„ Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
D
D
D
D
S
S
D
D
G
S
S
S
Pin 1
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
80
±20
60
148
24
150
240
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.3
1.0
38
81
16
23
11
°C/W
Device Marking
86300
Device
FDMS86300DC
Package
Dual CoolTM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86300DC Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 24 A
VGS = 8 V, ID = 21 A
VGS = 10 V, ID = 24 A, TJ = 125 °C
VDD = 10 V, ID = 24 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 40 V , ID = 24 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V VDD = 40 V
ID = 24 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.7 A
VGS = 0 V, IS = 24 A
(Note 2)
(Note 2)
IF = 24 A, di/dt = 100 A/μs
Min
80
2.5
Typ
45
3.3
-11
2.6
3.1
4.1
79
5265
929
21
1.2
29
25
35
9
72
59
26
14
0.72
0.80
56
42
Max Units
V
mV/°C
1
±100
μA
nA
4.5 V
mV/°C
3.1
4.0 mΩ
5.0
S
7005
1235
50
pF
pF
pF
Ω
47 ns
44 ns
57 ns
18 ns
101 nC
84 nC
nC
nC
1.2
V
1.3
88 ns
67 nC
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET March 2012 FDMS86300D C N-Channel Dual CoolTM Power Trench® MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM Top Side Cooling PQFN packa ge „ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 4.0 mΩ at VGS = 8 V, ID = 21 A „ High perform ance technology for extremely low rDS(o n) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MO SFET is produced using Fairchild Semico nductor’s advanced Power Trench® pro cess. Advancements in both silicon and Dual CoolTM package technologies have b een combined to offer the lowest rDS(on ) while maintaining excellent switching performance by extremely low Junction- to-Ambient thermal resistance. Applica tions „ Synchronous Rectifier for DC/D C Converters „ Telecom Secondary Side Rectification „ High End Server/Workst ation Vcore Low Side D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sy.
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