N-Channel MOSFET. FDMS86310 Datasheet

FDMS86310 Datasheet PDF, Equivalent


Part Number

FDMS86310

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86310 Datasheet PDF


FDMS86310 Datasheet
FDMS86310
N-Channel PowerTrench® MOSFET
80 V, 50 A, 4.8 mΩ
Features
„ Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
„ Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
January 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary Switch
„ Synchronous Rectifier
„ Motor Switch
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
50
105
17
100
183
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS86310
Device
FDMS86310
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86310 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
80
V
ID = 250 μA, referenced to 25 °C
45 mV/°C
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
±100
μA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2.4 3.3 4.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-11 mV/°C
VGS = 10 V, ID = 17 A
3.8 4.8
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 14 A
4.5 6.7 mΩ
VGS = 10 V, ID = 17 A, TJ = 125 °C
5.7 7.2
gFS Forward Transconductance
VDS = 10 V, ID = 17 A
49 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
4730
693
19
1.3
6290
925
45
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 40 V, ID = 17 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V
VDD = 40 V,
ID = 17 A
28 45 ns
23 37 ns
35 56 ns
9 18 ns
66 95 nC
55 78 nC
24 nC
14 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 17 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 17 A, di/dt = 100 A/μs
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 17 A, di/dt = 300 A/μs
0.72
0.81
51
41
43
87
1.2
1.3
80
65
69
140
V
ns
nC
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 35 A, VDD = 72 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 January 2012 N-Channel Po werTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features General Description This N-Cha nnel MOSFET has been designed specifica lly to improve the overall efficiency a nd to minimize switch node ringing of D C/DC converters using either synchronou s or conventional switching PWM control lers.It has been optimized for low gate charge, low rDS(on), fast switching sp eed and body diode reverse recovery per formance. „ Max rDS(on) = 4.8 mΩ at V GS = 10 V, ID = 17 A „ Max rDS(on) = 6 .7 mΩ at VGS = 8 V, ID = 14 A „ Advan ced Package and Silicon combination for low rDS(on) and high efficiency „ Nex t generation enhanced engineered for so ft recovery „ MSL1 robust package desi gn „ 100% UIL tested „ RoHS Compliant body diode technology, Applications Primary Switch „ Synchronous Rectifi er „ Motor Switch Top Bottom S S Pi n 1 S S S S D D D D Pin 1 G D D D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym.
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