N-Channel MOSFET. FDMS86350 Datasheet

FDMS86350 Datasheet PDF, Equivalent


Part Number

FDMS86350

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86350 Datasheet


FDMS86350 Datasheet
April 2013
FDMS86350
N-Channel PowerTrench® MOSFET
80 V, 80 A, 2.4 mΩ
Features
General Description
„ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Primary MOSFET
„ Synchronous Rectifier
„ Load Switch
„ Motor Control Switch
Top
Pin 1
Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
SD
GD
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
80
±20
80
25
300
864
156
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.8
45
°C/W
Device Marking
FDMS86350
Device
FDMS86350
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86350 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
80
V
45 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.5 3.8 4.5
V
ID = 250 μA, referenced to 25 °C
-12 mV/°C
VGS = 10 V, ID = 25 A
VGS = 8 V, ID = 22 A
VGS = 10 V, ID = 25 A, TJ = 125 °C
VDS = 5 V, ID = 25 A
2.0 2.4
2.5 3.2 mΩ
3.1 3.8
70 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 40 V, VGS = 0 V,
f = 1 MHz
8030 10680 pF
1370 1825 pF
31 50 pF
0.1 1.1
3
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 40 V, ID = 25 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V VDD = 40 V,
ID = 25 A
50 80
34 55
40 65
11 20
110 155
90 127
46
23
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 25 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 25 A, di/dt = 100 A/μs
0.71
0.79
63
62
1.2
1.3
101
100
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 45 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 864 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 24 A, VDD = 80 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 74 A.
4. Pulse Id limited by junction temperature, td <= 100 μs, please refer to SOA curve for more details.
©2013 Fairchild Semiconductor Corporation
FDMS86350 Rev. C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel Power Trench® MOSFET 80 V, 80 A, 2.4 mΩ Fea tures General Description This N-Channe l MOSFET is produced using Fairchild Se miconductor‘s advanced Power Trench® process that has been especially tailo red to minimize the on-state resistance and yet maintain superior switching pe rformance. „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A „ Adv anced Package and Silicon combination f or low rDS(on) and high efficiency „ M SL1 robust package design „ 100% UIL t ested „ RoHS Compliant Applications Primary MOSFET „ Synchronous Rectifi er „ Load Switch „ Motor Control Swit ch Top Pin 1 Bottom S Pin 1 S S G S S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless oth erwise noted Symbol VDS VGS ID EAS PD T J, TSTG Parameter Drain to Source Volta ge Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation P.
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