FDMS86350

FDMS86350 N-Channel PowerTrench® MOSFET April 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 80 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Applications „ Primary MOSFET „ Synchronous Rectifier „ Load Switch „ Motor Control Switch Top Pin 1 Bottom S Pin 1 S S G S S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TA = 25 °C (Note 1a) (Note 4) (Note 3) Ratings 80 ±20 80 25 300 864 156 2.7 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 0.8 45 °C/W Package Marking and Ordering Information Device Marking FDMS86350 Device FDMS86350 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 ...