N-Channel MOSFET. FDMS86500DC Datasheet

FDMS86500DC Datasheet PDF, Equivalent


Part Number

FDMS86500DC

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMS86500DC Datasheet PDF


FDMS86500DC Datasheet
FDMS86500DC
November 2012
N-Channel Dual CoolTM Power Trench® MOSFET
60 V, 108 A, 2.3 mΩ
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A
„ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A
„ High performance technology for extremely low rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
Top
D
D
D
D
G
S
S
S
Power 56
Bottom
Pin 1
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
108
29
200
317
125
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.8
1.0
38
81
16
23
11
°C/W
Device Marking
86500
Device
FDMS86500DC
Package
Dual CoolTM Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86500DC Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25°C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 29 A
VGS = 8 V, ID = 24 A
VGS = 10 V, ID = 29 A, TJ = 125 °C
VDS = 10 V, ID = 29 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 30 V , ID = 29 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V VDD = 30 V
ID = 29 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.7 A
VGS = 0 V, IS = 29 A
(Note 2)
(Note 2)
IF = 29 A, di/dt = 100 A/μs
Min
60
2.5
0.1
Typ
30
3.7
-12
1.9
2.4
3.0
98
5775
1605
48
1
35
25
34
8.2
76
62
31
15
0.71
0.79
59
46
Max Units
V
mV/°C
1
±100
μA
nA
4.5 V
mV/°C
2.3
3.3 mΩ
3.7
S
7680
2680
95
3
pF
pF
pF
Ω
56 ns
40 ns
54 ns
17 ns
107 nC
87 nC
nC
nC
1.2
V
1.3
95 ns
74 nC
©2012 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET November 2012 FDMS865 00DC N-Channel Dual CoolTM Power Trench ® MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM Top Side Cooling PQFN p ackage „ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A „ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A „ High per formance technology for extremely low r DS(on) „ 100% UIL Tested „ RoHS Compl iant General Description This N-Channe l MOSFET is produced using Fairchild Se miconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies ha ve been combined to offer the lowest rD S(on) while maintaining excellent switc hing performance by extremely low Junct ion-to-Ambient thermal resistance. App lications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary S ide Rectification „ High End Server/Wo rkstation Vcore Low Side D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise note.
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