FDMS86500DC

FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET November 2012 FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A „ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side D D D D S S D D D D Pin 1 S G S S S S Bottom Pin 1 G Top Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 60 ±20 108 29 200 317 125 3.2 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJC RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Therm...