N-Channel MOSFET. FDMS86520 Datasheet

FDMS86520 Datasheet PDF, Equivalent


Part Number

FDMS86520

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS86520 Datasheet PDF


FDMS86520 Datasheet
FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
Features
„ Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A
„ Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
October 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary DC-DC Switch
„ Motor Bridge Switch
„ Synchronous Rectifier
Top Bottom
Pin 1
S
S
S
G
S
S
D
D
Power 56
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
60
±20
42
74
14
80
86
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
50
°C/W
Device Marking
FDMS86520
Device
FDMS86520
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS86520 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
60
V
ID = 250 μA, referenced to 25 °C
30 mV/°C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 14 A
VGS = 8 V, ID = 12.5 A
VGS = 10 V, ID = 14 A, TJ = 125 °C
VDS = 10 V, ID = 14 A
2.5
3.6 4.5
V
-11 mV/°C
6.0 7.4
7.3 10.3 mΩ
9 11
49 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
2140 2850 pF
624 830 pF
24 40 pF
0.1 0.7 2.1
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 14 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V
VDD = 30 V,
ID = 14 A
17
6.7
20
4
28
23
10.9
5.6
31
14
32
10
40
33
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 14 A
(Note 2)
(Note 2)
0.74 1.2
0.83 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14 A, di/dt = 100 A/μs
37 60 ns
21 35 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14 A, di/dt = 300 A/μs
31 49 ns
40 64 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 54 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86520 N-Channel PowerTrench® MOSFET October 2012 FDMS86520 N-Channel Pow erTrench® MOSFET 60 V, 42 A, 7.4 mΩ F eatures General Description This N-Chan nel MOSFET has been designed specifical ly to improve the overall efficiency an d to minimize switch node ringing of DC /DC converters using either synchronous or conventional switching PWM controll ers.It has been optimized for low gate charge, low rDS(on), fast switching spe ed and body diode reverse recovery perf ormance. „ Max rDS(on) = 7.4 mΩ at VG S = 10 V, ID = 14 A „ Max rDS(on) = 10 .3 mΩ at VGS = 8 V, ID = 12.5 A „ Adv anced Package and Silicon combination f or low rDS(on) and high efficiency „ N ext generation enhanced engineered for soft recovery „ MSL1 robust package de sign „ 100% UIL tested „ RoHS Complia nt body diode technology, Applications „ Primary DC-DC Switch „ Motor Bridg e Switch „ Synchronous Rectifier Top Bottom Pin 1 S S S S G S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym.
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