N-Channel MOSFET
FDMS86520 N-Channel PowerTrench® MOSFET
FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
Features
Max rDS(o...
Description
FDMS86520 N-Channel PowerTrench® MOSFET
FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
Features
Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
October 2014
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
Primary DC-DC Switch Motor Bridge Switch Synchronous Rectifier
Top
Bottom
Pin 1
S S
S
D
S
G
S
D
Power 56
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S G
(Note 1a) (Note 3)
(Note 1a)
D D
Ratings 60 ±20 42 14 80 86 69 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resist...
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