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FDMS86540 Dataheets PDF



Part Number FDMS86540
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMS86540 DatasheetFDMS86540 Datasheet (PDF)

FDMS86540 N-Channel PowerTrench® MOSFET FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 129 A, 3.4 mΩ Features „ Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant May 2015 General Description This N-Channel MOSFET has been designed s.

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FDMS86540 N-Channel PowerTrench® MOSFET FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 129 A, 3.4 mΩ Features „ Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch Top Bottom Pin 1 S S D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) D D Ratings 60 ±20 129 82 20 642 228 96 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information 1.3 (Note 1a) 50 °C/W Device Marking FDMS86540 Device FDMS86540 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86540 Rev. 1.4 www.fairchildsemi.com FDMS86540 N-Channel PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 60 V ID = 250 μA, referenced to 25 °C 28 mV/°C VDS = 48 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 1 μA ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 20 A rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 18.5 A VGS = 10 V, ID = 20 A, TJ = 125 °C gFS Forward Transconductance VDS = 10 V, ID = 20 A 3.2 4 V -11 mV/°C 2.7 3.4 3.1 4.1 mΩ 3.8 4.8 73 S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 4837 6435 pF 1413 .


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