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FDMS86540 N-Channel PowerTrench® MOSFET
FDMS86540
N-Channel PowerTrench® MOSFET
60 V, 129 A, 3.4 mΩ
Features
Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch
Top
Bottom
Pin 1 S
S
D
S
S G
S
D
Power 56
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S G
(Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a)
D D
Ratings 60 ±20 129 82 20 642 228 96 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
1.3
(Note 1a)
50
°C/W
Device Marking FDMS86540
Device FDMS86540
Package Power 56
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86540 Rev. 1.4
www.fairchildsemi.com
FDMS86540 N-Channel PowerTrench® MOSFET
SS SF DS DF G
SS SF DS DF G
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
60
V
ID = 250 μA, referenced to 25 °C
28
mV/°C
VDS = 48 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
1
μA
±100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 20 A
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 18.5 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
gFS
Forward Transconductance
VDS = 10 V, ID = 20 A
3.2
4
V
-11
mV/°C
2.7
3.4
3.1
4.1
mΩ
3.8
4.8
73
S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 30 V, VGS = 0 V, f = 1 MHz
4837 6435 pF
1413 .