FDMS8660AS

FDMS8660AS N-Channel PowerTrench® SyncFETTM May 2009 FDMS8660AS N-Channel PowerTrench SyncFET 30V, 49A, 2.1m: Features „ Max rDS(on) = 2.1m: at VGS = 10V, ID = 28A „ Max rDS(on) = 3.1m: at VGS = 4.5V, ID = 22A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant ® TM tm  General Description The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Top Bottom S Pin 1 S D S G 5 6 7 8 4 3 2 1 G S S S D D D D D D D Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 2) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 49 179 28 200 726 104 2.5 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Th...