N-Channel MOSFET. FDMS8674 Datasheet

FDMS8674 Datasheet PDF, Equivalent


Part Number

FDMS8674

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDMS8674 Datasheet PDF


FDMS8674 Datasheet
November 2007
FDMS8674
N-Channel PowerTrench® MOSFET
30V, 21A, 5.0m
tm
Features
General Description
„ Max rDS(on) = 5.0mat VGS = 10V, ID = 17A
„ Max rDS(on) = 8.0mat VGS = 4.5V, ID = 14A
„ Advanced Package and Silicon combination
for low rDS(on) and high efficiency
„ MSL1 robust package design
„ RoHS Compliant
The FDMS8674 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ Computing VR & IMVP Vcore
„ Secondary Side Synchronous Buck
„ POL DC-DC Converter
„ Oring FET / Load Switch
Pin 1
S
S
S
G
D
D
DD
Power 56 (Bottom View)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
21
94
17
150
181
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS8674
Device
FDMS8674
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMS8674 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
V
ID = 250µA, referenced to 25°C
25 mV/°C
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
1.0 1.8 3.0
V
ID = 250µA, referenced to 25°C
-6 mV/°C
VGS = 10V, ID = 17A
VGS = 4.5V, ID = 14A
VGS = 10V, ID = 17A, TJ = 125°C
VDD = 10V, ID = 17A
4.1 5.0
5.8 8.0 m
5.8 8.3
87 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
1745
860
130
0.9
2320
1145
195
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 17A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 15V,
ID = 17A
11 20 ns
4 10 ns
26 42 ns
3 10 ns
26 37 nC
14 20 nC
4.8 nC
3.5 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.1A (Note 2)
VGS = 0V, IS = 17A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 17A, di/dt = 100A/µs
0.7 1.2
V
0.8 1.2
V
40 64 ns
30 48 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
2
www.fairchildsemi.com


Features Datasheet pdf FDMS8674 N-Channel PowerTrench® MOSFET November 2007 FDMS8674 N-Channel Powe rTrench MOSFET 30V, 21A, 5.0mΩ Featur es „ Max rDS(on) = 5.0mΩ at VGS = 10 V, ID = 17A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 14A „ Advanced Packa ge and Silicon combination for low rDS( on) and high efficiency „ MSL1 robust package design „ RoHS Compliant ® t m General Description The FDMS8674 has been designed to minimize losses in po wer conversion application. Advancement s in both silicon and package technolog ies have been combined to offer the low est rDS(on) while maintaining excellent switching performance. Applications Computing VR & IMVP Vcore „ Secondar y Side Synchronous Buck „ POL DC-DC Co nverter „ Oring FET / Load Switch Pin 1 S S D S G D D D D D Power 56 (Bottom View) D 5 6 7 8 4 G 3 S 2 S 1 S D M OSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Paramet er Drain to Source Voltage Gate to Sour ce Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon li.
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