2SA1122

2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –55 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — — — Max — — — –0.5 –0.5 800 –0.5 –0.75 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –30 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE B CC 160 to 320 C CD 250 to 500 V(BR)EBO I CBO I EBO hFE* 160 — — D CE VCE(sat) VBE V V I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA 1. The 2SA1122 is grouped by hFE as follows. 400 to 800 See characteristic curves of 2SA836. 2 2SA1122 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 ...