Document
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Synchronous Rectifier Primary Switch For Bridge Topology
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
SO-8
D2 5
D2 6
Q2
D1 7
Q1
D1 8
4 G2 3 S2 2 G1 1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) (Note1a)
Ratings 100 ±20 2.7 15 13 31 1.6
-55 to +150
Units V V A mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Device Marking FDS89161
Device FDS89161
Package SO-8
Reel Size 13 ’’
Tape Width 12 mm
Quantity 2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS89161 Rev. 1.4
www.fairchildsemi.com
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
100
V
67
mV/°C
1
μA
±100 nA
On Characteristics
VGS(th)
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
2
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 2.7 A VGS = 6 V, ID = 2.1 A VGS = 10 V, ID = 2.7 A, TJ = 125 °C VDS = 10 V, ID = 2.7 A
3
4
V
-9
mV/°C
86
105
120
171
mΩ
144 176
5
S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 50 V, VGS = 0 V, f = 1MHz
158 210
pF
43
58
pF
3
5
pF
1
Ω
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 5 V
VDD = 50 V, ID = 2.7 A
4.2
10
ns
1.3
10
ns
7.3
15
ns
1.9
10
ns
3
4.1
nC
1.7
2.4
0.8
nC
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A VGS = 0 V, IS = 2 A
(Note 2) (Note 2)
0.85 1.3 V
0.82 1.2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 2.7 A, di/dt = 100 A/μs
34
54
ns
21
34
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper
b) 135°C/W when mounted on a minimun pad
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
2
FDS89161 Rev. 1.4
www.fairchildsemi.com
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
15 VGS = 10 V
12
VGS = 7 V
9 VGS = 6 V
6 VGS = 5.5 V
3
VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4 VGS = 5 V VGS = 5.5 V
3
VGS = 6 V 2
1
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
0
0
3
6
9
ID, DRAIN CURRENT (A)
VGS = 7 V VGS = 10 V
12
15
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.0 1.8 ID = 2.7 A
VGS = 10 V 1.6
1.4
1.2
1.0
0.8
0.6
0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On-Resistance vs Junction Temperature
rDS(on), DRAIN TO SOURCE ON-RE.