Document
FQPF5N50CF 500V N-Channel MOSFET
FRFET
FQPF5N50CF
500V N-Channel MOSFET
Features
• 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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G! GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
Parameter
FQPF5N50CF
500 5 2.9 20 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
300 5 7.3 4.5 38 0.3 -55 to +150 300
Thermal Characteristics
Symbol
RθJC RθJS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQPF5N50CF
3.31 -62.5
Units
°C/W °C/W °C/W
©2005 Fairchild Semiconductor Corporation
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www.fairchildsemi.com
FQPF5N50CF Rev. B
Free Datasheet http://www.datasheet4u.com/
FQPF5N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQPF5N50CF
Device
FQPF5N50CF
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 ------
-0.5 -----
--1 10 100 -100
V V/°C µA µA nA nA
Breakdown Voltage Temperature Coef- ID = 250 µA, Referenced to 25°C ficient Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.5A VDS = 40 V, ID = 2.5A
(Note 4)
2.0 ---
-1.3 5.2
4.0 1.55 --
V Ω S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF
Switching Characteri.