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FQPF5N50CF Dataheets PDF



Part Number FQPF5N50CF
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Low gate charge
Datasheet FQPF5N50CF DatasheetFQPF5N50CF Datasheet (PDF)

FQPF5N50CF 500V N-Channel MOSFET FRFET FQPF5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro.

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FQPF5N50CF 500V N-Channel MOSFET FRFET FQPF5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! ● ◀ ▲ ● ● G! GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Parameter FQPF5N50CF 500 5 2.9 20 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 5 7.3 4.5 38 0.3 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQPF5N50CF 3.31 -62.5 Units °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQPF5N50CF Rev. B Free Datasheet http://www.datasheet4u.com/ FQPF5N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQPF5N50CF Device FQPF5N50CF Package TO-220F Reel Size - Tape Width - Quantity Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 ------ -0.5 ----- --1 10 100 -100 V V/°C µA µA nA nA Breakdown Voltage Temperature Coef- ID = 250 µA, Referenced to 25°C ficient Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.5A VDS = 40 V, ID = 2.5A (Note 4) 2.0 --- -1.3 5.2 4.0 1.55 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF Switching Characteri.


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