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SSI32R2214RX

ETC

4-Channel Thin Film Read/Write Device

SSI 32R2214RX +5V, 4-Channel Thin Film Read/Write Device Prototype March 1995 DESCRIPTION The SSI 32R2214RX is a BiCMO...


ETC

SSI32R2214RX

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Description
SSI 32R2214RX +5V, 4-Channel Thin Film Read/Write Device Prototype March 1995 DESCRIPTION The SSI 32R2214RX is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write current control, and data protection circuitry for up to four channels. The SSI 32R2214RX has an internal 900Ω damping resistor. The damping resistor is switched in during write mode and switched out during read mode. Power supply fault protection is provided by disabling the write current generator during power sequencing. System write to read recovery time is significantly improved by making the read channel outputs high impedance. Two guard pins are provided for maximum supply noise rejection. The device also offers multiple channel “servo bank write” capability to assist in servo writing operations. The SSI 32R2214RX requires only a +5V power supply. FEATURES +5V ±10% supply Low power - PD = 105 mW read mode (Nom) - PD = 1.0 mW Idle (Max) High Performance: - Read mode gain = 300 V/V - Input noise = 0.50 nV/√Hz (Nom) - Input capacitance = 7 pF (Nom) - Write current range = 3-25 mA - Nominal write current (20 mA) rise/fall time = 7.7 ns (Nom) (typical head) - Head voltage swing = 7.8 Vpp (Nom) Servo bank-write capability Self switching damping resistance Write unsafe detection (continued) BLOCK DIAGRAM VCC GND WUS PIN DIAGRAM N/C GUARD 1 2 3 4 5 6 24 23 22 21 20 GND CS R/W WC RDY RDX HS0 HS1 VCC WD WD WUS WRI...




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