SSG9922E
6.8A, 20V,RDS(ON) 20m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Prod...
SSG9922E
6.8A, 20V,RDS(ON) 20m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOP-8
Description
The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
6.20 5.80 0.25 0.40 0.90 0.19 0.25
45
o
0.375 REF
3.80 4.00
Features
* Optimal DC/DC Battery Application * Low On-Resistance * Capable Of 2.5V Gate Drive
D1 8 D1 7 D2 6 D2 5
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1
D2
9922ESS
Date Code
G1
G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VG
[email protected] Continuous Drain Current , VG
[email protected] Pulsed Drain Current
1 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
20
±12 6.8 5.4 25 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
62.5
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
Page 1 of 4
Free Datasheet http://www.datasheet4u.com/
SSG9922E
6.8A, 20V,RDS(ON) 20m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=...