IXTH260N055T2

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH260N055T2 VDSS ID25 RDS(on) = 55V = 260A ≤ 3.3mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 55 55 ± 20 260 160 780 100 600 480 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g Features z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 International standard package 175°C Operating Temperature High current handling capability Avalanche rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 5 150 V V nA μA μA Applications z z z z Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 3.3 mΩ © 2008 IXYS CORPORATION, All rights reserved DS100078(11/08) Free Datasheet http://www.datasheet4u.com/ ...