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IXTH26P20P Dataheets PDF



Part Number IXTH26P20P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTH26P20P DatasheetIXTH26P20P Datasheet (PDF)

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤ RDS(on) - 200V - 26A 170mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight G S D (Tab) G DS D (Tab) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 V - 200 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited .

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PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤ RDS(on) - 200V - 26A 170mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight G S D (Tab) G DS D (Tab) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 V - 200 V ±20 V ±30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C - 26 A - 70 A - 26 A 1.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 300 - 55 ... +150 150 - 55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 300 °C 260 °C Mounting Torque (TO-3P,TO-220 &TO-247) 1.13/10 Nm/lb.in. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. - 200 V - 2.0 - 4.0 V ±100 nA - 10 μA -150 μA 170 mΩ G D S TO-247 (IXTH) D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z Rugged PolarPTM Process z Low Package Inductance z Fast Intrinsic Diode Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2013 IXYS CORPORATION, All Rights Reserved DS99913D(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = -25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS (TO-3P & TO-247) (TO-220) IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P Characteristic Values Min. Typ. Max. 10 17 S 2740 pF 540 pF 100 pF 18 ns 33 ns 46 ns 21 ns 56 nC 18 nC 20 nC 0.42 °C/W 0.21 °C/W 0.50 °C/W Safe Operating Area Specification Symbol SOA Test Conditions Characteristic Values Min. Typ. Max. VDS = - 200V, ID = - 0.8A, TC = 70°C, Tp = 5s 160 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = -13A, VGS = 0V, Note 1 trr QRM IRM IF = -13A, -di/dt = -100A/μs VR = -100V, VGS = 0V Characteristic Values Min. Typ. Max. - 26 A - 104 A - 3.2 V 240 ns 2.2 μC -18.0 A Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 TO-263 Outline 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 4.83 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.64 9.65 8.00 8.89 9.65 10.41 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .190 .039 .055 .016 .029 .045 .055 .340 .280 .380 .380 .320 .405 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-247 Outline 123 ∅P e Terminals: 1 - Gate 2 - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 © 2013 IXYS CORPORATION, All Rights Reserved IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P TO-220 Outline Pins: 1 - Gate 2 - Drain TO-3P Outline IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P ID - Amperes Fig. 1. Output Characteristics @ TJ= 25ºC -28 VGS = -10V - 8V -24 -20 -7V -16 - 6V -12 -8 - 5V -4 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 VDS - Volts ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC -90 VGS = -10V -80 - 9V -70 -60 - 8V -50 -40 - 7V -30 - 6V -20 -10 - 5V 0 0 -5 -10 -15 -20 -25 -30 VDS - Volts ID - Amperes Fig. 3. Output Characteristics @ TJ = 125ºC -28 VGS = -10V - 8V -24 - 7V -20 -16 - 6V -12 -8 - 5V -4 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 VDS -.


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