Document
PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS =
ID25 = ≤ RDS(on)
- 200V - 26A
170mΩ
TO-3P (IXTQ)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
G S
D (Tab)
G DS
D (Tab)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
- 200
V
- 200
V
±20
V
±30
V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
- 26
A
- 70
A
- 26
A
1.5
J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
10
300
- 55 ... +150 150
- 55 ... +150
V/ns
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s
300
°C
260
°C
Mounting Torque (TO-3P,TO-220 &TO-247)
1.13/10
Nm/lb.in.
TO-263 TO-220 TO-3P TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 10 μA -150 μA
170 mΩ
G D S
TO-247 (IXTH)
D (Tab)
G D S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Avalanche Rated z Rugged PolarPTM Process z Low Package Inductance z Fast Intrinsic Diode
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators
© 2013 IXYS CORPORATION, All Rights Reserved
DS99913D(01/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = -25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External)
Qg(on) Qgs Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
(TO-3P & TO-247) (TO-220)
IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P
Characteristic Values Min. Typ. Max.
10
17
S
2740
pF
540
pF
100
pF
18
ns
33
ns
46
ns
21
ns
56
nC
18
nC
20
nC
0.42 °C/W
0.21
°C/W
0.50
°C/W
Safe Operating Area Specification
Symbol SOA
Test Conditions
Characteristic Values Min. Typ. Max.
VDS = - 200V, ID = - 0.8A, TC = 70°C, Tp = 5s 160
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = -13A, VGS = 0V, Note 1
trr QRM IRM
IF = -13A, -di/dt = -100A/μs VR = -100V, VGS = 0V
Characteristic Values Min. Typ. Max.
- 26 A
- 104 A
- 3.2 V
240
ns
2.2
μC
-18.0
A
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
TO-263 Outline
1. Gate 2. Collector 3. Emitter 4. Collector
Bottom Side
Dim.
A b b2
c c2
D D1
E
E1 e L L1 L2 L3 L4
Millimeter Min. Max.
4.06 4.83 0.51 0.99 1.14 1.40
0.40 0.74 1.14 1.40
8.64 9.65 8.00 8.89
9.65 10.41
6.22 2.54 14.61 2.29 1.02 1.27
0
8.13 BSC 15.88 2.79 1.40 1.78 0.13
Inches Min. Max.
.160 .020 .045
.190 .039 .055
.016 .029 .045 .055
.340 .280
.380
.380 .320
.405
.270 .100 .575 .090 .040 .050
0
.320 BSC .625 .110 .055 .070 .005
TO-247 Outline
123
∅P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13 b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P
TO-220 Outline
Pins: 1 - Gate
2 - Drain
TO-3P Outline
IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P
ID - Amperes
Fig. 1. Output Characteristics @ TJ= 25ºC
-28 VGS = -10V - 8V
-24
-20
-7V
-16 - 6V
-12
-8 - 5V
-4
0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5
VDS - Volts
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-90
VGS = -10V
-80
- 9V
-70
-60
- 8V
-50
-40
- 7V
-30 - 6V
-20
-10
- 5V
0
0
-5
-10
-15
-20
-25
-30
VDS - Volts
ID - Amperes
Fig. 3. Output Characteristics @ TJ = 125ºC
-28 VGS = -10V - 8V
-24
- 7V -20
-16
- 6V
-12
-8
- 5V -4
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
VDS -.