IXTA60N10T

TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 TO-263 2.5 TO-220 3.0 °C °C N/lb Nm/lb.in g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 50A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1& 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V             100 nA 1 A 100  A 14.8 18.0 m © 2018 IXYS CORPORATION, All rights reserved VDSS = ID25 = RDS(on)  100V 60A 18m TO-263 (IXTA) TO-220 (IXTP) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Ultra-Low On Resistance  Avalanche Rated  Low Package Inductance - Easy to Drive and to Protect  175C Operating Temperature  Fast Intrinsic Diode Advantages  Easy to Mount  Space Savings  High Power Density Applications  Automotive - Motor Drives - 42V Po...