IXTA6N100D2

Depletion Mode MOSFET N-Channel IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 TO-263 AA (IXTA) G S G S D (Tab) TO-220AB (IXTP) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings 1000 V 20 V 30 V 300 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 3A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.5 V 100 nA 5 A 50 A 2.2  6 A GD S D (Tab) TO-247 (IXTH) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode  International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100183C(4/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise...