IS61VVF204836B

IS61LF204836B, IS61VF/VVF204836B IS61LF409618B, IS61VF/VVF409618B 2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Common data inputs and data outputs Auto Power-down during deselect Single cycle deselect Snooze MODE for reduced-power standby JTAG Boundary Scan for PBGA package Power Supply LF: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) VF: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) VVF: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%) JEDEC 100-Pin TQFP, 119-pin PBGA, and 165pin PBGA packages Lead-free available ADVANCED INFORMATION OCTOBER 2012 DESCRIPTION The 72Mb product family features  high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LF/VF204836B is organized as 2,096,952 words by 36 bits. The IS61LF/VF409618B is organized as 4,193,904 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and highdrive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are i...