TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applicatio...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
2SA1163
Unit: mm
AEC-Q101 Qualified (Note1).
High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1 dB (typ.), 10 dB (max) Complementary to 2SC2713 Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
−120
V
VCEO
−120
V
VEBO
−5
V
IC
−100
mA
IB
−20
mA
PC (Note 2, 4)
200
mW
PC (Note 3)
150
Tj (Note 2)
150
°C
Tj (Note 3)
125
Tstg (Note 2)
−55 to 150
°C
Tstg (Note 3)
−55 to 125
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and ind...