2SA1177

Ordering number:ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use · Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Package Dimensions unit:mm 2033A 4.0 [2SA1177] 3.0 2.2 Features · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 3.0 3.8 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings –30 –20 –5 –30 150 125 –55 to +125 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Feedback Capacitance Base-to-Collector Time Constant Noise Figure Power Gain Rank hFE D 60 to 120 E 100 to 200 Symbol ICBO IEBO hFE fT Cre rbb, cc NF PG F 160 to 320 VCB=–10V, IE=0 VEB=–4A, IC=0 VCE=–6V, IC=–1mA VCE=–6V, IC=–1mA VCB=–6V, f=1MHz VCB=–6V, IC=–1mA, f=31.9MHz VCE=–6V, IC=–1mA, f=100MHz VCE=–6V, IC=–1mA, f=100MHz 60* 150 230 1.1 11 2.5 22 1.7 20 Conditions Ratings min typ max –0.1 –0.1 320* MHz pF ps dB dB Unit µA µA * : 2SA1177 is classified as follows according to hFE at 1mA. Any and all SANYO products described or contained herein do not have specifi...