2SA1193(K)
Silicon PNP Epitaxial, Darlington
Application
High gain amplifier
Outline
TO-92MOD
2
3
1. Emitter 2. Col...
2SA1193(K)
Silicon
PNP Epitaxial, Darlington
Application
High gain amplifier
Outline
TO-92MOD
2
3
1. Emitter 2. Collector 3. Base
1
3 2 1
2SA1193(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –60 –60 –7 –0.5 –1.0 0.9 150 –55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — V V µs µs I C = –250 mA I B1 = –IB2 = –0.5 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 I C = –250 mA, IB = –0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off
2
2SA1193(K)
Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A) –3 –1.0 0.6 –0.3 –0.1 –0.03 –0.01 –0.003 –3 iC (peak) IC max Area of Safe Operation
PW t ho 1 s hot s ot ms ms 1 1 sh ms = 1W = 10 00 P =1 PW
Ta = 25°C
0.3
0
50 100 150 Ambient Temperature Ta (°C)
–10 –30 –100 –300 Collector to Emiter Voltage VCE (V)
Typical Ou...