2SA1194(K)
Silicon PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. B...
2SA1194(K)
Silicon
PNP Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base
1
2
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg
1
Rating –60 –60 –7 –1 –2 1 8 150 –55 to +150
Unit V V V A A W W °C °C
2SA1194(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –60 — — 1000 — — — — Typ — — — — — — 0.7 0.8 Max — –1.0 –1.0 — –2.0 –2.0 — — V V µs µs I C = –500 mA I B1 = –IB2 = –1 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off
Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) –10 –3 iC (peak) –1.0 –0.3 –0.1 –0.03
Area of Safe Operation
PW =1
Collector Current IC (A)
ms
8
IC (max) PW = 10 ms (1 Shot)
D (T C O C = pe 25 rat °C ion )
(1 S hot )
4
0
50 100 Case Temperature TC (°C)
150
Ta = 25°C –0.01 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector to emit...