2SA1200

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) −150 −150 −5 −50 −10 500 800 V V V mA mA mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2002-08-19 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = −150 V, IE = 0 VEB = −5 V, IC = 0 hFE (Note 2) VCE = −5 V, IC = −10 mA VCE (sat) IC = −10 mA, IB = −1 mA VBE VCE = −5 V, IC = −30 mA fT VCE = −30 V, IC = −10 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification BO 2SA1200 Min Typ. Max Unit ― ― −0.1 µA ― ― −0.1 µA 70 ― 240 ― ― −0.8 V ― ― −0.9 V ― 120 ― MHz ...