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2SA1201 Dataheets PDF



Part Number 2SA1201
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1201 Datasheet2SA1201 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base curren.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −120 V VCEO −120 V VEBO −5 V IC −800 mA IB −160 mA PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-07 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −120 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 V (BR) EBO IE = −1 mA, IC = 0 hFE VCE = −5 V, IC = −100 mA (Note 3) VCE (sat) VBE fT IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −5 V, IC = −100 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note 3: hFE classification O: 80 to 160, Y: 120 to 240 Marking Part No. (or abbreviation code) D Lot No. Characteristics indicator Note 4 2SA1201 Min Typ. Max Unit ― ― −0.1 μA ― ― −0.1 μA −120 ― ― V −5 ― ― V 80 ― 240 ― ― −1.0 V ― ― −1.0 V ― 120 ― MHz ― ― 30 pF Note 4: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 Collector current IC (mA) IC – VCE −800 −10 −7 Common emitter −600 Ta = 25°C −5 −4 −3 −400 −2 −200 IB = −1 mA 0 0 0 −4 −8 −12 −16 Collector-emitter voltage VCE (V) DC current gain hFE 2SA1201 1000 500 300 100 50 30 hFE – IC Ta = 100°C 25 −25 Common emitter VCE = −5 V 10 −3 −10 −30 −100 −300 −1000 Collector current IC (mA) Collector-emitter saturation voltage VCE (sat) (V) −0.5 −0.3 −0.1 −0.05 −0.03 −0.01 −3 VCE (sat) – IC Common emitter IC/IB = 10 Ta = 100°C 25 −25 −10 −30 −100 −300 Collector current IC (mA) −1000 −3000 −1000 Safe Operating Area IC max (pulse)* IC max (continuous) 10 ms* 1 ms* −500 −300 −100 −50 −30 DC operation Ta = 25°C 100 ms* −10 *: Single nonrepetitive pulse Ta = 25°C −5 Curves must be derated linearly −3 with increase in temperature. Tested without a substrate. −1 −0.3 −1 −3 −10 VCEO max −30 −100 Collector-emitter voltage VCE (V) −300 Collector power dissipation PC (W) Collector current IC (A) −0.8 Common emitter VCE = −5 V −0.6 IC – VBE −0.4 Ta = 100°C 25 −25 −0.2 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Base-emitter voltage VBE (V) 1.2 (1) 1.0 0.8 PC – Ta (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2013-11-01 Collector current IC (mA) 2SA1201 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permi.


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