Document
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications Power Amplifier Applications
2SA1201
Unit: mm
• High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
−120
V
VCEO
−120
V
VEBO
−5
V
IC
−800
mA
IB
−160
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
1980-07
1
2013-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
V (BR) EBO IE = −1 mA, IC = 0
hFE VCE = −5 V, IC = −100 mA
(Note 3)
VCE (sat) VBE fT
IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −5 V, IC = −100 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Note 3: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Part No. (or abbreviation code)
D
Lot No.
Characteristics indicator Note 4
2SA1201
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
−120 ―
―
V
−5
―
―
V
80
―
240
―
―
−1.0
V
―
―
−1.0
V
― 120 ― MHz
―
―
30
pF
Note 4: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2013-11-01
Collector current IC (mA)
IC – VCE
−800
−10
−7
Common emitter
−600
Ta = 25°C −5
−4
−3 −400
−2
−200
IB = −1 mA
0
0
0
−4
−8
−12
−16
Collector-emitter voltage VCE (V)
DC current gain hFE
2SA1201
1000 500 300
100 50 30
hFE – IC
Ta = 100°C 25 −25
Common emitter VCE = −5 V
10
−3
−10
−30
−100
−300
−1000
Collector current IC (mA)
Collector-emitter saturation voltage VCE (sat) (V)
−0.5 −0.3
−0.1 −0.05 −0.03
−0.01 −3
VCE (sat) – IC
Common emitter IC/IB = 10
Ta = 100°C
25 −25
−10
−30
−100
−300
Collector current IC (mA)
−1000
−3000 −1000
Safe Operating Area
IC max (pulse)* IC max (continuous)
10 ms*
1 ms*
−500 −300
−100 −50 −30
DC operation
Ta = 25°C
100 ms*
−10 *: Single nonrepetitive pulse
Ta = 25°C −5 Curves must be derated linearly −3 with increase in temperature.
Tested without a substrate.
−1
−0.3
−1
−3
−10
VCEO max
−30
−100
Collector-emitter voltage VCE (V)
−300
Collector power dissipation PC (W)
Collector current IC (A)
−0.8 Common emitter VCE = −5 V
−0.6
IC – VBE
−0.4
Ta = 100°C 25
−25
−0.2
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base-emitter voltage VBE (V)
1.2 (1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6 (2)
0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2013-11-01
Collector current IC (mA)
2SA1201
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permi.