2SA1222

DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings −160 −140/–160 −5.0 −500 −1.0 1.0 150 −55 to +150 Unit V V V mA A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Symbol ICBO IEBO hFE ** VBE ** VCE(sat) ** VBE(sat) ** Cob fT Conditions VCB = −100 V, IE = 0 VEB = −5.0 V, IC = 0 VCE = −2.0 V, IC = −100 mA VCE = −5.0 V, IC = −20 mA IC = −1.0 A, IB = −0.2 A IC = −1.0 A, IB = −0.2 A VCB = −10 V, IE = 0, f = 1.0 MHz VCE = −10 V, IE = 20 mA 30 100 −0.6 150 −0.64 −0.6 −1.1 24 45 MIN. TYP. MAX. −200 −200 400 −0.7 −0.9 −0.3 40 V V V pF MHz Unit nA nA ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed The information in this docum...