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2SA1241 Dataheets PDF



Part Number 2SA1241
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1241 Datasheet2SA1241 Datasheet (PDF)

Bipolar Transistors Silicon PNP Epitaxial Type 2SA1241 2SA1241 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rati.

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Bipolar Transistors Silicon PNP Epitaxial Type 2SA1241 2SA1241 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -5 Collector current (DC) (Note 1) IC -2 A Collector current (pulsed) (Note 1) ICP -3 Base current Collector power dissipation Collector power dissipation Junction temperature (Ta = 25 �) (Tc = 25 �) IB -1 PC 1 W PC 10 Tj 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 �. ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1981-08 2021-12-17 Rev.1.0 5. Thermal Characteristics 2SA1241 Characteristics Junction-to-case thermal resistance Junction-to-ambient thermal resistance Symbol Rth(j-c) Rth(j-a) 6. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �) Max Unit 12.5 �/W 125 Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 A Collector-emitter breakdown voltage DC current gain V(BR)CEO hFE(1) (Note 2) IC = -10 mA, IB = 0 A VCE = -2 V, IC = -0.5 A hFE(2) VCE = -2 V, IC = -1.5 A Collector-emitter saturation voltage VCE(sat) IC = -1.0 A, IB = -50 mA Base-emitter saturation voltage VBE(sat) IC = -1.0 A, IB = -50 mA Note 2: hFE(1)classification O: 70 to 140, Y: 120 to 240 � � -1.0 µA � � -1.0 µA -50 � � V 70 � 240 � 40 � � � � � -0.5 V � � -1.2 V 6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Transition frequency Collector output capacitance Switching time (rise time) Switching time (storage time) Switching time (fall time) Symbol Test Condition fT VCE = -2 V, IC = -0.5 A Cob VCB = -10 V, IE = 0 A, f = 1 MHz tr See Fig. 6.2.1 tstg VCC ≈ -30 V, RL = 30 Ω, IB1 = -50 mA, IB2 = 50 mA, tf Min Ty.


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