Document
Bipolar Transistors Silicon PNP Epitaxial Type
2SA1241
2SA1241
1. Applications
• Power Amplifiers • Power Switching
2. Features
(1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076
3. Packaging and Internal Circuit
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-5
Collector current (DC)
(Note 1)
IC
-2
A
Collector current (pulsed)
(Note 1)
ICP
-3
Base current Collector power dissipation Collector power dissipation Junction temperature
(Ta = 25 �) (Tc = 25 �)
IB
-1
PC
1
W
PC
10
Tj
150
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 �.
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1981-08
2021-12-17 Rev.1.0
5. Thermal Characteristics
2SA1241
Characteristics Junction-to-case thermal resistance Junction-to-ambient thermal resistance
Symbol
Rth(j-c) Rth(j-a)
6. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �)
Max
Unit
12.5
�/W
125
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
ICBO VCB = -50 V, IE = 0 A
Emitter cut-off current
IEBO VEB = -5 V, IC = 0 A
Collector-emitter breakdown voltage DC current gain
V(BR)CEO
hFE(1) (Note 2)
IC = -10 mA, IB = 0 A VCE = -2 V, IC = -0.5 A
hFE(2) VCE = -2 V, IC = -1.5 A
Collector-emitter saturation voltage
VCE(sat) IC = -1.0 A, IB = -50 mA
Base-emitter saturation voltage
VBE(sat) IC = -1.0 A, IB = -50 mA
Note 2: hFE(1)classification O: 70 to 140, Y: 120 to 240
�
�
-1.0
µA
�
�
-1.0
µA
-50
�
�
V
70
�
240
�
40
�
�
�
�
�
-0.5
V
�
�
-1.2
V
6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �)
Characteristics
Transition frequency Collector output capacitance Switching time (rise time) Switching time (storage time) Switching time (fall time)
Symbol
Test Condition
fT
VCE = -2 V, IC = -0.5 A
Cob
VCB = -10 V, IE = 0 A, f = 1 MHz
tr
See Fig. 6.2.1
tstg
VCC ≈ -30 V, RL = 30 Ω, IB1 = -50 mA, IB2 = 50 mA,
tf
Min Ty.