2SA1242

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.5 1.0 10 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability dat...