2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications 2SA1244 Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3074 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 Junction temperature JEDEC ― Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-7J1A Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1981-05 1 2013-11-01 2SA1244 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off curren...