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2SA1289 Dataheets PDF



Part Number 2SA1289
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Transistors
Datasheet 2SA1289 Datasheet2SA1289 Datasheet (PDF)

Ordering number:ENN1199D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). · Power amp (high power car stereo, motor controller). · High-speed switching (switching regulator, driver). Package Dimensions unit:mm 2010C [2SA1289/2SC3253] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 Features · Low satu.

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Ordering number:ENN1199D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). · Power amp (high power car stereo, motor controller). · High-speed switching (switching regulator, driver). Package Dimensions unit:mm 2010C [2SA1289/2SC3253] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 Features · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1289 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)2V, IC=(–)1A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2.5A, IB=(–)0.125A * : The 2SA1290/2SC3254 are classified by 1A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 18.0 5.6 1.2 0.8 123 2.55 2.55 2.7 14.0 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB Ratings (–)80 (–)60 (–)5 (–)5 (–)7 30 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ max Unit (–)0.1 mA (–)0.1 mA 70* 280* 100 MHz (–)0.4 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73102TN (KT)/71598HA (KT)/D051MH (KOTO) No.1199-1/4 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 2SA1289/2SC3253 Symbol Conditions V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Switching Time Test Circuit PW=20µs D.C.=≤1% IB1 RB INPUT IB2 VR 50Ω OUTPUT RL 10Ω + 100µF + 470µF VBE=--5V VCC=20V 20IB1=--20IB2=IC=2A (For PNP, the polarity is reversed.) Ratings min typ (–)80 (–)60 (–)5 0.1 0.5 0.1 max Unit V V V µs µs µs Collector Current, IC – A Ta=120°C 25°C --40°C Collector Current, IC – A --6 IC -- VBE 2SA1289 VCE=--2V --5 --4 --3 --2 --1 00 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE – V ITR03171 --1000 7 5 hFE -- IC 2SA1289 VCE=--2V 3 Ta=120°C 2 25°C 100 --40°C 7 5 3 2 10 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 7 --10 2 ITR03173 IC -- VBE 6 2SC3253 VCE=2V 5 4 Ta=120°C 25°C --40°C 3 2 1 0 0 1000 7 5 3 2 100 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE – V ITR03172 hFE -- IC 2SC3253 VCE=2V Ta=120°C 25°C --40°C 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – A ITR03174 No.1199-2/4 DC Current Gain, hFE DC Current Gain, hFE Gain-Bandwidth Product, fT – MHz Collector-to-Emitter Saturation Voltage, VCE(sat) – V Gain-Bandwidth Product, fT – MHz 2SA1289/2SC3253 fT -- IC fT -- IC 22 2SA1289 2SC3253 VCE=--5V VCE=5V 100 100 77 55 33 22 10 7 55 7--0.01 2 --100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A VCE(sat) -- IC 2 3 5 7 --10 ITR03175 2SA1289 IC / IB=20 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 --0.01 2 3 --10 7 ICP=–7A 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A ASO 2 3 5 7 --10 ITR03177 2SA1289 5 IC=–5A 3 2 --1.0 7 5 1ms 3 2 --0.1 7 5 2 2.0 3 5 7 --10 23 5 7 --100 Collector-to-Emitter Voltage, VCE – V ITR03179 PC -- Ta 1.75 1.5 1.0 No heat sink Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Current, IC – A 1m1s01Dm0Cs0mopseration 101Dm0Cs0mopseration 10 7 55 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A VCE(sat) -- IC 100 7 5 3 2 2 3 5 7 10 ITR03176 2SC3253 IC / IB=20 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0..


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