Document
Ordering number:ENN1199D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1289/2SC3253
60V/5A High-Speed Switching Applications
Applications
· Various inductance lamp drivers for electrical equipment.
· Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).
· Power amp (high power car stereo, motor controller).
· High-speed switching (switching regulator, driver).
Package Dimensions
unit:mm
2010C
[2SA1289/2SC3253]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
Features
· Low saturation voltage. · Excellent current dependence of hFE. · Short switching time.
( ) : 2SA1289
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)2V, IC=(–)1A
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)1A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)2.5A, IB=(–)0.125A
* : The 2SA1290/2SC3254 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE 70 to 140 100 to 200 140 to 280
18.0 5.6
1.2
0.8 123 2.55 2.55
2.7 14.0
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB
Ratings (–)80 (–)60 (–)5 (–)5 (–)7 30 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 mA
(–)0.1 mA
70* 280*
100 MHz
(–)0.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/D051MH (KOTO) No.1199-1/4
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time
2SA1289/2SC3253
Symbol
Conditions
V(BR)CBO V(BR)CEO V(BR)EBO
ton tstg
tf
IC=(–)1mA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)1mA, IC=0 See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs D.C.=≤1%
IB1 RB
INPUT
IB2 VR
50Ω
OUTPUT RL 10Ω
+ 100µF
+ 470µF
VBE=--5V
VCC=20V
20IB1=--20IB2=IC=2A (For PNP, the polarity is reversed.)
Ratings min typ (–)80 (–)60
(–)5 0.1 0.5 0.1
max
Unit
V V V µs µs µs
Collector Current, IC – A Ta=120°C 25°C --40°C
Collector Current, IC – A
--6 IC -- VBE
2SA1289 VCE=--2V --5
--4
--3
--2
--1
00 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03171
--1000
7 5
hFE -- IC
2SA1289 VCE=--2V
3 Ta=120°C
2 25°C
100 --40°C
7 5
3 2
10 7 5
3
--0.01 2 3
5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A
5 7 --10 2
ITR03173
IC -- VBE
6
2SC3253 VCE=2V
5
4
Ta=120°C 25°C
--40°C
3
2
1
0 0
1000 7 5 3 2
100 7 5 3 2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03172
hFE -- IC
2SC3253 VCE=2V
Ta=120°C 25°C --40°C
10 7 5
3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC – A
ITR03174
No.1199-2/4
DC Current Gain, hFE DC Current Gain, hFE
Gain-Bandwidth Product, fT – MHz
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Gain-Bandwidth Product, fT – MHz
2SA1289/2SC3253
fT -- IC
fT -- IC
22
2SA1289
2SC3253
VCE=--5V
VCE=5V
100 100
77
55
33 22
10
7
55 7--0.01 2
--100
7 5 3 2
3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A
VCE(sat) -- IC
2 3 5 7 --10
ITR03175
2SA1289 IC / IB=20
--10
7
5 3 2
--1.0
7 5
3 2
--0.1
7 5
3 2
--0.01 --0.01 2 3
--10
7
ICP=–7A
5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A
ASO
2
3 5 7 --10
ITR03177
2SA1289
5
IC=–5A
3
2
--1.0
7 5
1ms
3
2
--0.1
7 5
2
2.0
3 5 7 --10
23
5 7 --100
Collector-to-Emitter Voltage, VCE – V ITR03179
PC -- Ta
1.75
1.5
1.0 No heat sink
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Collector Current, IC – A
1m1s01Dm0Cs0mopseration 101Dm0Cs0mopseration
10
7
55 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC – A
VCE(sat) -- IC
100 7
5
3
2
2 3 5 7 10 ITR03176
2SC3253 IC / IB=20
10 7 5 3 2
1.0 7 5 3 2
0.1
7 5 3
2
0.01 0..