TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications Power Switching Applica...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications Power Switching Applications
2SA1297
Unit: mm
Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-emitter voltage
VCEO −20 V
Emitter-base voltage
VEBO −6 V
Collector current
IC −2 A
Base current
IB −0.5 A
Collector power dissipation Junction temperature Storage temperature range
PC 400 mW
Tj 150 °C
Tstg
−55 to 150
°C
MINI
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-4E1A
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
Weight: 0.13 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter sat...