2SA1315
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1315
Power Amplifier Applications Power Switchin...
2SA1315
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1315
Power Amplifier Applications Power Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3328
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −5 −2 −1 900 150 −55 to 150 Unit V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-12-21
Free Datasheet http://www.Datasheet4U.com
2SA1315
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage ...