TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and Recom...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers
2SA1316
Unit: mm
· Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
· Low pulse noise. Low 1/f noise
· Low base spreading resistance: rbb’ = 2.0 Ω (typ.) · Complementary to 2SC3329
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
-80 -80 -5 -100 -20 400 125 -55~125
Electrical Characteristics (Ta = 25°C)
Unit
V V V mA mA mW °C °C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance
Noise figure
ICBO IEBO V (BR) CEO
VCB = -80 V, IE = 0 VEB = -5 V, IC = 0 IC = -1 mA, IB = 0
hFE VCE = -6 V, IC = -2 mA
(Note)
VCE (sat) VBE rbb’
IC = -10 mA, IB = -1 mA VCE = -6 V, IC = -2 mA VCE = -6 V, IC = -1 mA, f = 100 MHz
fT VCE = -6 V, IC = -1 mA, f = 100 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA f = 10 Hz, RG = 10 kW
VCE =...