2SA1359

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching 2SA1359 Unit: mm Suitable for the output stage of 5-watt car radios and car stereos. Good hFE linearity Complementary to 2SC3422. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −40 −40 −5 −3 −1 1.5 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.82 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-...