2SA1417

Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)120 (--)100 (--)6 (--)2 (--)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SA1417S-TD-E 2SA1417T-TD-E 1.5 2SC3647S-TD-E 2SC3647T-TD-E Product & Package Information Package : PCP JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD 1.0 2.5 4.0 AC LOT No. CC LOT No. 1 0.4 2 0.5 1.5 3.0 3 0.4 0.75 Bottom View 1 : Base 2 : Collector 3 : Emitter SANYO : PCP TD Marking RANK RANK 2SA1417 2SC3647 Electrical Connection 22 11 3 2SA1417 3 2SC3647 http://www.sanyosemi.com/en/network/ 90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7 2SA1417 / 2SC3647 Electrical C...