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2SA1433 Dataheets PDF



Part Number 2SA1433
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA1433 Datasheet2SA1433 Datasheet (PDF)

Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction.

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Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Contact Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage ICBO IEBO hFE fT rbb, 'cc Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=–40V, IE=0 VEB=–3V, IC=0 VCE=–10V, IC=–10mA VCE=–10V, IC=–10mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz VCB=–10V, f=1MHz IC=–20mA, IB=–2mA IC=–20mA, IB=–2mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 * : The 2SA1433 is classified by 10mA hFE as follows : 60 D 120 100 E 200 160 F 320 hFE rank : D, E, F EIAJ : SC-51 SANYO : MP B : Base C :Collector E : Emitter Ratings –70 –60 –4 –50 –100 900 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 60* 350 700 8 1.7 1.3 –70 –60 –4 max (–)0.1 (–)1.0 320* –0.6 –1.0 Unit µA µA MHz pF pF V V V V V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/5280TA (KOTO) No.3471-1/2 2SA1433 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied .


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