ST 2SA1266
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdiv...
ST 2SA1266
PNP Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications. The
transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg
Value 50 50 5 150 50 500 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group
at -VCE = 6 V, -IC = 150 mA Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 1 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 V, f = 1 KHz, RG = 10 KΩ
Symbol O Y G hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob NF
Min. 70 120 200 25 80 -
Max. 140 240 400 0.1 0.1 0.3 1.1 7 10
Unit µA µA V V MHz pF dB
Dated : 20/05/2010 Rev:01
Free Datasheet http://www.datasheet4u.com/
ST 2SA1266
Dated : 20/05/2010 Rev:01
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