2SA1266

ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg Value 50 50 5 150 50 500 150 - 55 to + 150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group at -VCE = 6 V, -IC = 150 mA Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 1 mA Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 0.1 V, f = 1 KHz, RG = 10 KΩ Symbol O Y G hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob NF Min. 70 120 200 25 80 - Max. 140 240 400 0.1 0.1 0.3 1.1 7 10 Unit µA µA V V MHz pF dB Dated : 20/05/2010 Rev:01 Free Datasheet http://www.datasheet4u.com/ ST 2SA1266 Dated : 20/05/2010 Rev:01 ...