P1003EVG

P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±25 -13 -9 -50 -49 120 2.5 1.6 -55 to 150 UNITS V TA = 25 ° C TA = 70 ° C ID IDM IAS A L = 0.1mH TA = 25 ° C TA = 70 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS ° C/W Pulse width limited by maximum junction temperature. Ver 1.0 1 2012/4/16 Free Datasheet http://www.datasheet4u.com/ P1003EVG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 1 LIMITS MIN -30 -1.0 -1.5 -3 ±100 -1 -10 -50 13 10.5 9 29 4200 16 12 10.5 TYP MAX UNIT V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = ...