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ST13009 Dataheets PDF



Part Number ST13009
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description High voltage fast-switching NPN power transistor
Datasheet ST13009 DatasheetST13009 Datasheet (PDF)

ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. 3 2 1 TO-220 Figure 1. Internal schemat.

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. June 2009 Doc ID 11491 Rev 3 1/11 www.st.com 11 Contents Contents ST13009 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 11491 Rev 3 ST13009 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 700 400 12 12 24 6 12 100 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case ____M __mMax Value 1.25 Unit °C/W Doc ID 11491 Rev 3 3/11 Electrical characteristics 2 Electrical characteristics ST13009 (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE = -1.5 V) VCE = 700 V VCE = 700 V TC = 100°C 10 µA 500 µA IEBO Emitter cut-off current (IC = 0) VEB = 10 V 10 µA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 4 A _ IC = 5 A _ _ IC = 8 A _ _ IC = 12 A _ _ IB = 0.8 A IB = 1 A IB = 1.6 A IB = 3 A 0.85 V 0.9 V 1.25 V 2.5 V VBE(sat) (1) Base-emitter saturation voltage IC = 5 A _ IC = 8 A _ _ IB = 1 A IB = 1.6 A 1.2 V 1.6 V hFE (1)(2) DC current gain IC = 5 A Group L Group H IC = 8 A _ __ VCE = 5 V VCE = 5 V 15 26 10 31 39 30 Inductive load ts Storage time tf Fall time IC = 5 A IB1 = 1 A L = 200 µH see Figure 9 VCC = 250 V IB2 = -2 A 1.6 2.5 60 110 µs ns Inductive load ts Storage time tf Fall time IC = 5 A VCC = 125 V IB1 = - IB2 = 1.6 A L = 200 µH tc = 125 °C see Figure 9 2.3 110 µs ns 1. Pulsed duration = 300 µs, duty cycle ≤2 % 2. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 4/11 Doc ID 11491 Rev 3 ST13009 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation voltage voltage Doc ID 11491 Rev 3 5/11 Electrical characteristics Figure 8. Reverse biased operating area ST13009 6/11 Doc ID 11491 Rev 3 ST13009 3 Test circuit Figure 9. Inductive load switching Test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier Doc ID 11491 Rev 3 7/11 Package mechanical data 4 Package mechanical data ST13009 In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 8/11 Doc ID 11491 Rev 3 ST13009 Package mechanical data TO-220 mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62 D1 1.27 0.050 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 .


H151250G ST13009 SCH5027E


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